Part Number Hot Search : 
UCA6430N 00ETT FE0201 MCP6241 ICS8624I Z2SMB91 T145471J DS1245Y
Product Description
Full Text Search
 

To Download 12N10G-TA3-T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  unisonic technologies co., ltd 12n10 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-737.e 12a, 100v n-channel power mosfet ? description the utc 12n10 is an n-channel mode power mosfet using utc?s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche char acteristics and less critical alignment steps. ? features * r ds(on) < 0.18 ? @ v gs =10v, i d =6a * high switching speed * low gate charge ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 123456 7 8 12n10l-ta3-t 12N10G-TA3-T to-220 g d s - - - - - tube 12n10l-tm3-t 12n10g-tm3-t to-251 g d s - - - - - tube 12n10l-tn3-r 12n10g-tn3-r to-252 g d s - - - - - tape reel - 12n10g-s08-r sop-8 s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
12n10 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-737.e ? marking to-220 / to-251 / to-252 sop-8
12n10 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-737.e ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (v gs =0) v dss 100 v gate-source voltage v gss 20 v drain current continuous t c =25c i d 12 a t c =100c 8.5 a pulsed (note 2) i dm 48 a power dissipation to-220 p d 73 w to-251/to-252 30 sop-8 5 avalanche energy (note 3) e as 100 mj junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. pulse width limited by safe operating area 3. starting t j = 25c, i d = 12a, v dd = 50v ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62.5 c/w to-251/to-252 100 sop-8 75 (note) junction to case to-220 jc 1.71 c/w to-251/to-252 4.1 sop-8 25 (note) note: device mounted on 1in 2 fr-4 board with 2oz. copper, t = 10sec.
12n10 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-737.e ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 100 v drain-source leakage current i dss v ds =max rating, v gs =0v 1 a gate- source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 3 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =6a 0.15 0.18 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 430 pf output capacitance c oss 90 pf reverse transfer capacitance c rss 20 pf switching parameters (note 1,2) total gate charge q g v gs =10v, v dd =80v, i d =12a 7.5 10 nc gate to source charge q gs 2.5 nc gate to drain charge q gd 3.0 nc turn-on delay time t d ( on ) v dd =30v, i d =1a, r g =9.1 ? , v gs =10v (fig. 1) 12 24 ns rise time t r 7 14 ns turn-off delay time t d ( off ) 18 35 ns fall-time t f 3 6 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 12 a maximum body-diode pulsed current i sm 48 a drain-source diode forward voltage (note 1) v sd i s =12a, v gs =0v 1.2 v notes: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature
12n10 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-737.e ? test circuits and waveforms
12n10 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-737.e ? typical characteristics 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current, i d (a) 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 14 12 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


▲Up To Search▲   

 
Price & Availability of 12N10G-TA3-T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X